
2DB1132Q-13
ObsoleteDiodes Inc
BIPOLAR TRANSISTORS - BJT 1000W -32VCEO

2DB1132Q-13
ObsoleteDiodes Inc
BIPOLAR TRANSISTORS - BJT 1000W -32VCEO
Description
General part information
2DB1132Q-13
BIPOLAR TRANSISTORS - BJT 1000W -32VCEO
Technical Specifications
Parameters and characteristics for this part
| Specification | 2DB1132Q-13 |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 120 |
| Frequency - Transition | 190 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-243AA |
| Package Name | SOT-89-3 |
| Power - Max | 1 VA |
| Qualification | AEC-Q101 |
| Transistor Type | PNP |
| Vce Saturation (Max) | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
Pricing
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CAD
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Documents
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