
DMT69M5LFVWQ-7
ActiveDiodes Inc
60V N-CHANNEL ENHANCEMENT MODE MOSFET

DMT69M5LFVWQ-7
ActiveDiodes Inc
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMT69M5LFVWQ-7
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT69M5LFVWQ-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 14.8 A |
| Current - Continuous Drain (Id) (Tc) | 40.6 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 28.4 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1406 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | PowerDI3333-8 (SWP) Type UX |
| Power Dissipation (Max) | 20.5 W, 2.74 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 8.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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Documents
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