1N2131A

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GeneSiC Semiconductor

DIODE GEN PURP 200V 60A DO5

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GeneSiC Semiconductor

DIODE GEN PURP 200V 60A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N2131A

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP 200V 60A DO5

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Speed	Speed	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor 1N2131A	200 V	Chassis, Stud Mount	200 C	-65 C	Standard	10 µA	60 A	Standard Recovery >500ns	200 mA	DO-5	DO-203AB, DO-5, Stud	1.1 V

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General part information

Diode 200 V 60A Chassis, Stud Mount DO-5

Technical documentation and resources