S1MR2

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A DO214AC

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	S1MR2

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	1500 ns
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Speed	Speed	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Mounting Type	Current - Average Rectified (Io)	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]
Taiwan Semiconductor Corporation S1MR2	1.1 V	Standard	Standard Recovery >500ns	200 mA	DO-214AC SMA	175 ░C	-55 C	1 µA	Surface Mount	1 A	DO-214AC (SMA)	1500 ns	1000 V
Taiwan Semiconductor Corporation S1M	1.1 V	Standard	Standard Recovery >500ns	200 mA	DO-214AC SMA	175 ░C	-55 C	1 µA	Surface Mount	1 A	DO-214AC (SMA)	1500 ns	1000 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1000 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources

No documents available