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ONSEMI RFD16N05SM9A

KSC5502DTM

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 600 V, 2 A, 50 W, TO-252 (DPAK), SURFACE MOUNT

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ONSEMI RFD16N05SM9A

KSC5502DTM

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 600 V, 2 A, 50 W, TO-252 (DPAK), SURFACE MOUNT

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Description

General part information

KSC5502D Series

NPN Triple Diffused Planar Silicon Transistor

Technical Specifications

Parameters and characteristics for this part

SpecificationKSC5502DTM
Current - Collector (Ic) (Max)2 A
Current - Collector Cutoff (Max)100 µA
DC Current Gain (hFE) (Min)4
Frequency - Transition11 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252AA
Power - Max50 VA
Transistor TypeNPN
Vce Saturation (Max)1.5 V
Voltage - Collector Emitter Breakdown (Max)600 V

Pricing

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CAD

3D models and CAD resources for this part