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NSS20200DMTTBG

NSS20200DMTTBG

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ON Semiconductor

20V DUAL LOW VCE(SAT) FOR LED SHUNT CONTROL IN PIXEL MATRIX LIGHTING/ REEL

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NSS20200DMTTBG

NSS20200DMTTBG

Active
ON Semiconductor

20V DUAL LOW VCE(SAT) FOR LED SHUNT CONTROL IN PIXEL MATRIX LIGHTING/ REEL

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Description

General part information

NSS20200DMTTBG

ON Semiconductor’s e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability in a small form factor, 2x2mm plastic leadless package. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. In the automotive industry they can be used in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

Technical Specifications

Parameters and characteristics for this part

SpecificationNSS20200DMTTBG
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)250
Frequency - Transition155 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-WDFN Exposed Pad
Package Length2 mm
Package Name6-WDFN
Package Width2 mm
PNP Count2
Transistor ConfigurationDual
Transistor TypePNP
Vce Saturation (Max)390 mV

Pricing

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CAD

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