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MUR360SB R5G - DO214

MUR360SB R5G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AA

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MUR360SB R5G - DO214

MUR360SB R5G

Unknown
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMUR360SB R5G
Capacitance @ Vr, F40 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseSMB, DO-214AA
Reverse Recovery Time (trr)50 ns
Speed200 mA, 500 ns
Supplier Device PackageSMB
Supplier Device PackageDO-214AA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.06
10$ 0.87

Description

General part information

MUR360 Series

Diode 600 V 3A Surface Mount DO-214AA (SMB)

Documents

Technical documentation and resources

No documents available