SF3001PT C0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 30A TO247AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 30A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	SF3001PT C0G

Capacitance @ Vr, F	175 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD (TO-3P)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Reverse Recovery Time (trr)	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Supplier Device Package
Taiwan Semiconductor Corporation SF3001PT C0G	175 pF	50 V	10 µA	30 A	TO-247-3	950 mV	Through Hole	35 ns	Standard	150 °C	-55 °C	200 mA 500 ns	TO-247AD (TO-3P)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 50 V 30A Through Hole TO-247AD (TO-3P)

Technical documentation and resources

No documents available