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ADP360120W3

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STMicroelectronics

AUTOMOTIVE-GRADE ACEPACK DRIVE POWER MODULE, SIXPACK TOPOLOGY 1200 V, 2.55 MOHM TYP. SIC MOSFET GEN.3 BASED

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ADP360120W3

Active
STMicroelectronics

AUTOMOTIVE-GRADE ACEPACK DRIVE POWER MODULE, SIXPACK TOPOLOGY 1200 V, 2.55 MOHM TYP. SIC MOSFET GEN.3 BASED

Deep-Dive with AI

DocumentsDatasheet+3

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationADP360120W3ADP360120W3 Series
--
Configuration6 N-Channel6 N-Channel
Current - Continuous Drain (Id) @ 25°C379 A379 A
Drain to Source Voltage (Vdss)1200 V1200 V
Drain to Source Voltage (Vdss)1.2 kV1.2 kV
Gate Charge (Qg) (Max) @ Vgs944 nC944 nC
Input Capacitance (Ciss) (Max) @ Vds28070 pF28070 pF
Mounting TypeChassis MountChassis Mount
Operating Temperature [Max]175 °C175 °C
Operating Temperature [Min]-40 C-40 C
Package / CaseModuleModule
Power - Max [Max]704 W704 W
Rds On (Max) @ Id, Vgs3.45 mOhm3.45 mOhm
Supplier Device PackageACEPACKACEPACK
TechnologySilicon Carbide (SiC)Silicon Carbide (SiC)
Vgs(th) (Max) @ Id4.4 V4.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 2565.40

ADP360120W3 Series

Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 2.55 mOhm typ. SiC MOSFET gen.3 based

PartOperating Temperature [Min]Operating Temperature [Max]Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs(th) (Max) @ IdMounting TypeSupplier Device PackageDrain to Source Voltage (Vdss)Drain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsPackage / CaseConfigurationPower - Max [Max]TechnologyCurrent - Continuous Drain (Id) @ 25°C
STMicroelectronics
ADP360120W3
-40 C
175 °C
3.45 mOhm
944 nC
4.4 V
Chassis Mount
ACEPACK
1200 V
1.2 kV
28070 pF
Module
6 N-Channel
704 W
Silicon Carbide (SiC)
379 A
STMicroelectronics
ADP360120W3

Description

General part information

ADP360120W3 Series

The ACEPACK DRIVE is a compact sixpack module optimized for hybrid and electric vehicles traction inverter. This power module features switches based on silicon carbide Power MOSFET 3rdgeneration, are characterized by very low RDS(on), very limited switching losses and outstanding performances in synchronous rectification working mode. This will ensure superb efficiency in final application, saving battery recharging cycles.

A copper base plate with pin-fin base structure make direct fluid cooling available for this power module minimizing thermal resistance.

A dedicated pin-out has been developed to get the best switching performances and press-fit pins will ensure optimal connection with driving board.