CNY17F3TVM
ActiveON Semiconductor
6-PIN DIP HIGH BV<SUB>CEO</SUB> PHOTOTRANSISTOR OUTPUT OPTOCOUPLER
CNY17F3TVM
ActiveON Semiconductor
6-PIN DIP HIGH BV<SUB>CEO</SUB> PHOTOTRANSISTOR OUTPUT OPTOCOUPLER
Description
General part information
CNY17F3TVM
The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
Technical Specifications
Parameters and characteristics for this part
| Specification | CNY17F3TVM |
|---|---|
| Current - DC Forward (If) (Max) | 60 mA |
| Current - Output / Channel | 50 mA |
| Current Transfer Ratio (Max) | 200 % |
| Current Transfer Ratio (Min) | 100 % |
| Input Type | DC |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature (Max) | 100 °C |
| Operating Temperature (Min) | -40 °C |
| Output Type | Transistor |
| Package Length | 10.16 mm |
| Package Name | 6-DIP |
| Package Width | 10.16 mm |
| Rise / Fall Time (Max) | 3.5 µs |
| Rise / Fall Time (Typ) | 4 µs |
| Turn Off Time (Typ) | 3 µs |
| Turn On Time (Typ) | 2 µs |
| Vce Saturation (Max) | 400 mV |
| Voltage - Forward (Vf) (Typ) | 1.35 V |
| Voltage - Isolation | 4170 Vrms |
| Voltage - Output (Max) | 70 V |
Pricing
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CAD
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Documents
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