DMG4800LSD-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4800LSD-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMG4800LSD-13
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | DMG4800LSD-13 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 7.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 8.56 nC |
| Input Capacitance (Ciss) (Max) | 798 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SO, 8-SOIC |
| Package Width | 3.9 mm |
| Power - Max | 1.17 W |
| Rds On (Max) | 16 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.6 V |
Pricing
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CAD
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