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NTP52N10G

NTP52N10G

Obsolete
ON Semiconductor

POWER MOSFET 60 A, 100 V, N-CHANNEL ENHANCEMENT MODE TO-220

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NTP52N10G

NTP52N10G

Obsolete
ON Semiconductor

POWER MOSFET 60 A, 100 V, N-CHANNEL ENHANCEMENT MODE TO-220

Find alt

Description

General part information

NTP52N10G

Power MOSFET 60 A, 100 V, N-Channel Enhancement Mode TO-220

Technical Specifications

Parameters and characteristics for this part

SpecificationNTP52N10G
Current - Continuous Drain (Id) (Ta)60 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)135 nC, 135 nC
Input Capacitance (Ciss) (Max)3150 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220
Power Dissipation (Max)214 W
Rds On (Max)30 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part