DMG6602SVT-7
Diodes Inc
DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 3.4 A, 3.4 A, 0.038 OHM
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DMG6602SVT-7
Diodes Inc
DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 3.4 A, 3.4 A, 0.038 OHM
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMG6602SVT-7 |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4 A, 2.8 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power - Max [Max] | 840 mW |
| Rds On (Max) @ Id, Vgs | 60 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMG6602SVTQ Series
This new generation 30V N +P channel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance. This device is ideally suited to Handheld application.
Documents
Technical documentation and resources