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IRFB3607PBF - ONSEMI ISL9V3040P3

IRFB3607PBF

Infineon Technologies

IR MOSFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 9 MOHM;

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DocumentsApplication Note ENDatasheet+1
IRFB3607PBF - ONSEMI ISL9V3040P3

IRFB3607PBF

Infineon Technologies

IR MOSFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 9 MOHM;

Deep-Dive with AI

DocumentsApplication Note ENDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB3607PBF
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]84 nC
Input Capacitance (Ciss) (Max) @ Vds3070 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)140 W
Rds On (Max) @ Id, Vgs9 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.74
10$ 1.11
100$ 0.74
500$ 0.59
1000$ 0.54
2000$ 0.49
5000$ 0.45
10000$ 0.45
NewarkEach 1$ 1.64
10$ 1.20
100$ 0.74
500$ 0.61
1000$ 0.55
4000$ 0.51
10000$ 0.47

Description

General part information

IRFB3607 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.