
DMN2005LP4K-7
ActiveDiodes Inc
MOSFET N-CH 20V 200MA 3DFN

DMN2005LP4K-7
ActiveDiodes Inc
MOSFET N-CH 20V 200MA 3DFN
Description
General part information
DMN2005LP4K-7
MOSFET N-CH 20V 200MA 3DFN
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2005LP4K-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 200 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.5 V |
| Drive Voltage (Min Rds On) | 4 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 41 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | 3-XFDFN |
| Package Name | X2-DFN1006-3 |
| Power Dissipation (Max) | 400 mW |
| Rds On (Max) | 1.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) | 900 mV |
Pricing
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CAD
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