4N38VM
ActiveON Semiconductor
6-PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR OUTPUT OPTOCOUPLER
4N38VM
ActiveON Semiconductor
6-PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR OUTPUT OPTOCOUPLER
Description
General part information
4N38VM
The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
Technical Specifications
Parameters and characteristics for this part
| Specification | 4N38VM |
|---|---|
| Current - DC Forward (If) (Max) | 80 mA |
| Current - Output / Channel | 100 mA |
| Current Transfer Ratio (Min) | 20 % |
| Input Type | DC |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature (Max) | 100 °C |
| Operating Temperature (Min) | -40 °C |
| Output Type | Transistor with Base |
| Package Length | 0.3 in |
| Package Name | 6-DIP |
| Package Width | 7.62 mm |
| Turn Off Time (Typ) | 5 µs |
| Turn On Time (Typ) | 5 µs |
| Vce Saturation (Max) | 1 V |
| Voltage - Forward (Vf) (Typ) | 1.15 V |
| Voltage - Isolation | 4170 Vrms |
| Voltage - Output (Max) | 80 V |
Pricing
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CAD
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