FDD3670
ActivePOWER MOSFET, N CHANNEL, 100 V, 34 A, 0.022 OHM, TO-252 (DPAK), SURFACE MOUNT
FDD3670
ActivePOWER MOSFET, N CHANNEL, 100 V, 34 A, 0.022 OHM, TO-252 (DPAK), SURFACE MOUNT
Description
General part information
FDD3670
The FDD3670 is a N-channel MOSFET produced using PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDD3670 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 34 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 80 nC, 80 nC |
| Input Capacitance (Ciss) (Max) | 2490 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252AA |
| Power Dissipation (Max) | 83 W, 3.8 W |
| Rds On (Max) | 32 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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