TN5325N8-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 250V, 7.0 OHM
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TN5325N8-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 250V, 7.0 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN5325N8-G | TN5325 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 316 mA | 150 - 316 mA |
| Drain to Source Voltage (Vdss) | 250 V | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF | 110 pF |
| Mounting Type | Surface Mount | Surface Mount, Through Hole |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 150 °C |
| Package / Case | TO-243AA | TO-243AA, TO-226-3, TO-92-3, SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | - | 360 - 740 mW |
| Rds On (Max) @ Id, Vgs | 7 Ohm | 7 Ohm |
| Supplier Device Package | TO-243AA (SOT-89) | TO-243AA (SOT-89), TO-92-3, TO-236AB (SOT23) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.78 | |
| 25 | $ 0.64 | |||
| 100 | $ 0.59 | |||
| Digi-Reel® | 1 | $ 0.78 | ||
| 25 | $ 0.64 | |||
| 100 | $ 0.59 | |||
| Tape & Reel (TR) | 2000 | $ 0.59 | ||
| Microchip Direct | T/R | 1 | $ 0.78 | |
| 25 | $ 0.64 | |||
| 100 | $ 0.59 | |||
| 1000 | $ 0.50 | |||
| 5000 | $ 0.46 | |||
| 10000 | $ 0.42 | |||
TN5325 Series
MOSFET, N-Channel Enhancement-Mode, 250V, 7.0 Ohm
| Part | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Mounting Type | Technology | Package / Case | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN5325N8-G | N-Channel | 4.5 V, 10 V | 110 pF | 316 mA | TO-243AA (SOT-89) | 250 V | 7 Ohm | 20 V | Surface Mount | MOSFET (Metal Oxide) | TO-243AA | 2 V | |||
Microchip Technology TN5325N3-G-P002 | |||||||||||||||
Microchip Technology TN5325N3-G | |||||||||||||||
Microchip Technology TN5325K1-G | |||||||||||||||
Microchip Technology TN5325N3-G | N-Channel | 4.5 V, 10 V | 110 pF | 215 mA | TO-92-3 | 250 V | 7 Ohm | 20 V | Through Hole | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 | 2 V | 740 mW | ||
Microchip Technology TN5325K1-G | N-Channel | 4.5 V, 10 V | 110 pF | 150 mA | TO-236AB (SOT23) | 250 V | 7 Ohm | 20 V | Surface Mount | MOSFET (Metal Oxide) | SC-59, SOT-23-3, TO-236-3 | 2 V | 360 mW | -55 °C | 150 °C |
Description
General part information
TN5325 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources