IRFR812TRPBF

Obsolete

Infineon Technologies

MOSFET N-CH 500V 3.6A DPAK

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Obsolete

Infineon Technologies

MOSFET N-CH 500V 3.6A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR812TRPBF

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	810 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	78 W
Rds On (Max) @ Id, Vgs	2.2 Ohm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IRFR812TRPBF	TO-252AA (DPAK)	500 V	10 V	N-Channel	5 V	-55 °C	150 °C	Surface Mount	20 nC	78 W	MOSFET (Metal Oxide)	2.2 Ohm	810 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	3.6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$