RSFALHRUG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 500MA SUB SMA

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Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 500MA SUB SMA

Technical Specifications

Parameters and characteristics for this part

Specification	RSFALHRUG

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	500 mA
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-219AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	Sub SMA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Package / Case	Speed	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Mounting Type	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Qualification	Grade	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Taiwan Semiconductor Corporation RSFALHR3G	DO-219AB	200 mA 500 ns	Sub SMA	1.3 V	50 V	4 pF	150 ns	Surface Mount	Standard	500 mA	5 µA	AEC-Q101	Automotive	150 °C	-55 °C
Taiwan Semiconductor Corporation RSFALHRUG	DO-219AB	200 mA 500 ns	Sub SMA	1.3 V	50 V	4 pF	150 ns	Surface Mount	Standard	500 mA	5 µA	AEC-Q101	Automotive	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 50 V 500mA Surface Mount Sub SMA

Technical documentation and resources