KSP06BU
ObsoleteON Semiconductor
NPN EPITAXIAL SILICON TRANSISTOR
KSP06BU
ObsoleteON Semiconductor
NPN EPITAXIAL SILICON TRANSISTOR
Description
General part information
KSP06BU
NPN EPITAXIAL SILICON TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | KSP06BU |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 50 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | TO-92-3 |
| Power - Max | 625 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
Pricing
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CAD
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Documents
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