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2STN2540 - SOT223-3L

2STN2540

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, -40 V, 1.6 W, -5 A, 250 ROHS COMPLIANT: YES

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2STN2540 - SOT223-3L

2STN2540

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, -40 V, 1.6 W, -5 A, 250 ROHS COMPLIANT: YES

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Technical Specifications

Parameters and characteristics commom to parts in this series

Specification2STN25402STN2540 Series
--
Current - Collector (Ic) (Max)5 A5 A
Current - Collector Cutoff (Max) [Max]100 nA100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]150 hFE150 hFE
Mounting TypeSurface MountSurface Mount
Operating Temperature150 °C150 °C
Package / CaseTO-261AA, TO-261-4TO-261AA, TO-261-4
Power - Max [Max]1.6 W1.6 W
Supplier Device PackageSOT-223SOT-223
Transistor TypePNPPNP
Vce Saturation (Max) @ Ib, Ic450 mV450 mV
Voltage - Collector Emitter Breakdown (Max) [Max]40 V40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.58
10$ 0.50
100$ 0.35
500$ 0.29
Digi-Reel® 1$ 0.58
10$ 0.50
100$ 0.35
500$ 0.29
Tape & Reel (TR) 1000$ 0.25
2000$ 0.22
5000$ 0.21
10000$ 0.19
25000$ 0.19
NewarkEach (Supplied on Full Reel) 1000$ 0.34
2000$ 0.32
4000$ 0.31
6000$ 0.30
10000$ 0.28

2STN2540 Series

Low voltage fast-switching PNP power transistor

PartOperating TemperatureCurrent - Collector (Ic) (Max)Current - Collector Cutoff (Max) [Max]Supplier Device PackagePower - Max [Max]Package / CaseMounting TypeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max) [Max]DC Current Gain (hFE) (Min) @ Ic, Vce [Min]Transistor Type
STMicroelectronics
2STN2540
150 °C
5 A
100 nA
SOT-223
1.6 W
TO-261-4, TO-261AA
Surface Mount
450 mV
40 V
150 hFE
PNP
STMicroelectronics
2STN2540
STMicroelectronics
2STN2540

Description

General part information

2STN2540 Series

The device in a PNP transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.