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NTMD6601NR2G

NTMD6601NR2G

Obsolete
ON Semiconductor

POWER MOSFET 80V 1.4A 245 MOHM DUAL N-CHANNEL SO-8

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NTMD6601NR2G

NTMD6601NR2G

Obsolete
ON Semiconductor

POWER MOSFET 80V 1.4A 245 MOHM DUAL N-CHANNEL SO-8

Find alt

Description

General part information

NTMD6601NR2G

Power MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMD6601NR2G
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id)1.1 A
Drain to Source Voltage (Vdss)80 V
FET FeatureLogic Level Gate
Gate Charge (Max)15 nC
Input Capacitance (Ciss) (Max)400 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
Power - Max0.6 W
Rds On (Max)0.215 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part