TC1550TG-G
ActiveN/P-CHANNEL ENHANCEMENT-MODE DUAL MOSFET
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TC1550TG-G
ActiveN/P-CHANNEL ENHANCEMENT-MODE DUAL MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | TC1550TG-G |
|---|---|
| Configuration | N and P-Channel |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 55 pF, 70 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rds On (Max) @ Id, Vgs | 60 Ohm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 7.62 | |
| 25 | $ 6.36 | |||
| 100 | $ 5.78 | |||
| Digi-Reel® | 1 | $ 7.62 | ||
| 25 | $ 6.36 | |||
| 100 | $ 5.78 | |||
| Tape & Reel (TR) | 3300 | $ 5.78 | ||
| Microchip Direct | T/R | 1 | $ 7.62 | |
| 25 | $ 6.36 | |||
| 100 | $ 5.78 | |||
| 1000 | $ 5.59 | |||
| 5000 | $ 5.53 | |||
TC1550 Series
N/P-Channel Enhancement-Mode Dual MOSFET
| Part | Rds On (Max) @ Id, Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TC1550TG-G | 60 Ohm | Surface Mount | 500 V | 8-SOIC | 3.9 mm | 0.154 in | 55 pF, 70 pF | N and P-Channel | -55 °C | 150 °C | 8-SOIC | MOSFET (Metal Oxide) |
Description
General part information
TC1550 Series
TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources