GE12050EEA3

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GE Aerospace

SIC 6N-CH 1200V 475A MODULE

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GE Aerospace

SIC 6N-CH 1200V 475A MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	GE12050EEA3

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	475 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	1248 nC
Input Capacitance (Ciss) (Max) @ Vds	29300 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	4.4 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.5 V

SIC 6N-CH 1200V 475A MODULE

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Configuration
GE Aerospace GE12050EEA3	475 A	4.4 mOhm	1248 nC	Chassis Mount	29300 pF	1200 V	1.2 kV	Module	Module	4.5 V	Silicon Carbide (SiC)	150 °C	-55 °C	6 N-Channel (3-Phase Bridge)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1200V (1.2kV) 475A (Tc) 1250W (Tc) Chassis Mount Module

Technical documentation and resources