NTHS4101PT1G
ActivePOWER MOSFET, P CHANNEL, 20 V, 4.8 A, 0.021 OHM, CHIPFET, SURFACE MOUNT
NTHS4101PT1G
ActivePOWER MOSFET, P CHANNEL, 20 V, 4.8 A, 0.021 OHM, CHIPFET, SURFACE MOUNT
Description
General part information
NTHS4101PT1G
Offers an Ultra Low RDS(on)Solution in the ChipFet™ Package
Miniature ChipFet™ Package with 40 % Smaller Footprint than TSOP-6, makes it an ideal device for Applications where board space is at a premium.
Low Profile (< 1.1 mm) allows it to fit easily into extremely thin environmentssuch as Portable Electronics.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTHS4101PT1G |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 4.8 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 35 nC |
| Input Capacitance (Ciss) (Max) | 2100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | Flat Leads, 8-SMD |
| Package Name | ChipFET™ |
| Power Dissipation (Max) | 1.3 W |
| Rds On (Max) | 34 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1.5 V |
Pricing
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