STQ3N45K3-AP

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STMicroelectronics

MOSFET N-CH 450V 600MA TO92-3

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STMicroelectronics

MOSFET N-CH 450V 600MA TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	STQ3N45K3-AP

Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	150 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	3.8 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

MOSFET N-CH 450V 600MA TO92-3

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Operating Temperature	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STQ3N45K3-AP	10 V	MOSFET (Metal Oxide)	450 V	3 W	TO-226-3, TO-92-3	TO-92-3	4.5 V	N-Channel	Through Hole	150 °C	3.8 Ohm	30 V	150 pF	6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 450 V 600mA (Tc) 3W (Tc) Through Hole TO-92-3

Technical documentation and resources