Zenode.ai Logo
Beta
K
DMN2008LFU-7 - DIODES INC. DMN2008LFU-7

DMN2008LFU-7

Active
Diodes Inc

MOSFET, DUAL, N-CH, 20V, 14.5A ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

DMN2008LFU-7 - DIODES INC. DMN2008LFU-7

DMN2008LFU-7

Active
Diodes Inc

MOSFET, DUAL, N-CH, 20V, 14.5A ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2008LFU-7
Configuration2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C14.5 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs [Max]42.3 nC
Input Capacitance (Ciss) (Max) @ Vds1418 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]1 W
Rds On (Max) @ Id, Vgs5.4 mOhm
Supplier Device PackageU-DFN2030-6 (Type B)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.60
10$ 0.52
100$ 0.36
500$ 0.30
1000$ 0.26
Digi-Reel® 1$ 0.60
10$ 0.52
100$ 0.36
500$ 0.30
1000$ 0.26
Tape & Reel (TR) 3000$ 0.23
6000$ 0.22
9000$ 0.21
NewarkEach (Supplied on Cut Tape) 1$ 0.89
10$ 0.58
25$ 0.52
50$ 0.45
100$ 0.39
250$ 0.35
500$ 0.30
1000$ 0.28

Description

General part information

DMN2008LFU Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.