NVMFS6H801NLWFT1G
ActiveMOSFET - POWER, SINGLE N-CHANNEL, 80 V, 2.7 MΩ, 160 A - NVMFS6H801NL
NVMFS6H801NLWFT1G
ActiveMOSFET - POWER, SINGLE N-CHANNEL, 80 V, 2.7 MΩ, 160 A - NVMFS6H801NL
Description
General part information
NVMFS6H801NLWFT1G
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAPcapable suitable for automotive applications
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMFS6H801NLWFT1G |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 24 A |
| Current - Continuous Drain (Id) (Tc) | 160 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 90 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 5126 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 5 Leads |
| Package Length | 4.9 mm |
| Package Name | 8-PowerTDFN, 5-DFNW, 8-SOFL-WF |
| Package Width | 5.9 mm |
| Power Dissipation (Max) | 167 W, 3.8 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 2.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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