DMN13H750S-13

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMN13H750S-13

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	130 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.6 nC
Input Capacitance (Ciss) (Max) @ Vds	231 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	770 mW
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMN13H750S-13	Surface Mount	6 V 10 V	4 V	1 A	750 mOhm	770 mW	231 pF	20 V	SC-59 SOT-23-3 TO-236-3	130 V	N-Channel	SOT-23-3	-55 °C	150 °C	MOSFET (Metal Oxide)	5.6 nC

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N-Channel Enhancement Mode MOSFET

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