DMC31D5UDJ-7

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Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMC31D5UDJ-7

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	220 mA, 200 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.38 nC
Input Capacitance (Ciss) (Max) @ Vds	22.6 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-963
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	SOT-963
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Complementary Pair Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]	FET Feature
Diodes Inc DMC31D5UDJ-7B	-55 °C	150 °C	200 mA 220 mA	Surface Mount	SOT-963	MOSFET (Metal Oxide)	22.6 pF	30 V	1 V	1.5 Ohm	SOT-963	0.38 nC	N and P-Channel	350 mW	Logic Level Gate
Diodes Inc DMC31D5UDJ-7	-55 °C	150 °C	200 mA 220 mA	Surface Mount	SOT-963	MOSFET (Metal Oxide)	22.6 pF	30 V	1 V	1.5 Ohm	SOT-963	0.38 nC	N and P-Channel	350 mW	Logic Level Gate

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General part information

Complementary Pair Enhancement Mode MOSFET

Technical documentation and resources