TP65H070G4RS-TR
ActiveRenesas Electronics Corporation
GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 29 A, 0.085 OHM, 9 NC, TOLT, SURFACE MOUNT
TP65H070G4RS-TR
ActiveRenesas Electronics Corporation
GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 29 A, 0.085 OHM, 9 NC, TOLT, SURFACE MOUNT
Description
General part information
TP65H070G4RS-TR
N-Channel 650 V 29A (Tc) 96W (Tc) Surface Mount TOLT
Technical Specifications
Parameters and characteristics for this part
| Specification | TP65H070G4RS-TR |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 29 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9 nC |
| Input Capacitance (Ciss) (Max) | 638 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 16-PowerSOP Module |
| Package Name | TOLT |
| Power Dissipation (Max) | 96 W |
| Rds On (Max) | 85 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.8 V |
Pricing
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CAD
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