DMN2046U-13

Active

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Active

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2046U-13

Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.8 nC
Input Capacitance (Ciss) (Max) @ Vds	292 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	760 mW
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

N-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type
Diodes Inc DMN2046U-7	12 V	3.8 nC	760 mW	2.5 V 4.5 V	MOSFET (Metal Oxide)	1.4 V	N-Channel	20 V	SOT-23-3	-55 °C	150 °C	3.4 A	292 pF	SC-59 SOT-23-3 TO-236-3	Surface Mount
Diodes Inc DMN2046U-13	12 V	3.8 nC	760 mW	2.5 V 4.5 V	MOSFET (Metal Oxide)	1.4 V	N-Channel	20 V	SOT-23-3	-55 °C	150 °C	3.4 A	292 pF	SC-59 SOT-23-3 TO-236-3	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources