IRFS52N15DTRRP

Obsolete

Infineon Technologies

MOSFET N-CH 150V 51A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 150V 51A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS52N15DTRRP

Current - Continuous Drain (Id) @ 25°C	51 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	89 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.8 W, 230 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	FET Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRFS52N15DTRRP	89 nC	30 V	5 V	2770 pF	32 mOhm	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 V	51 A	Surface Mount	3.8 W 230 W	D2PAK	10 V	-55 °C	175 ░C
Infineon Technologies IRFS52N15DTRLP	89 nC	30 V	5 V	2770 pF	32 mOhm	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 V	51 A	Surface Mount	3.8 W 230 W	D2PAK	10 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$