RS1DL RHG

Active

Taiwan Semiconductor Corporation

DIODE GP 200V 800MA SUB SMA

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

DIODE GP 200V 800MA SUB SMA

Technical Specifications

Parameters and characteristics for this part

Specification	RS1DL RHG

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	800 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-219AB
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	Sub SMA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Mounting Type	Package / Case	Capacitance @ Vr, F	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Grade	Qualification
Taiwan Semiconductor Corporation RS1DL RHG	Surface Mount	DO-219AB	10 pF	200 mA 500 ns	5 µA	150 °C	-55 °C	Sub SMA	200 V	800 mA	Standard	1.3 V	150 ns
Taiwan Semiconductor Corporation RS1DH	Surface Mount	DO-214AC SMA	10 pF	200 mA 500 ns	5 µA	150 °C	-55 °C	DO-214AC (SMA)	200 V	1 A	Standard	1.3 V	150 ns	Automotive	AEC-Q101
Taiwan Semiconductor Corporation RS1DLWHRVG	Surface Mount	SOD-123W		200 mA 500 ns	5 µA	175 ░C	-55 C	SOD-123W	200 V	1 A	Standard	1.3 V	150 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 800mA Surface Mount Sub SMA

Technical documentation and resources