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IRFR120NTRLPBF - TO252-3

IRFR120NTRLPBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 210 MOHM;

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IRFR120NTRLPBF - TO252-3

IRFR120NTRLPBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 210 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFR120NTRLPBF
Current - Continuous Drain (Id) @ 25°C9.4 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25 nC
Input Capacitance (Ciss) (Max) @ Vds330 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)48 W
Rds On (Max) @ Id, Vgs [Max]210 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
NewarkEach (Supplied on Full Reel) 3000$ 0.65
3000$ 0.65
6000$ 0.60
6000$ 0.60
12000$ 0.56
12000$ 0.56
18000$ 0.55
18000$ 0.55
30000$ 0.54
30000$ 0.54

Description

General part information

IRFR120 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources