UJ4C075060K4S

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Qorvo

SICFET N-CH 750V 28A TO247-4

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Qorvo

SICFET N-CH 750V 28A TO247-4

Technical Specifications

Parameters and characteristics for this part

Specification	UJ4C075060K4S

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	750 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	37.8 nC
Input Capacitance (Ciss) (Max) @ Vds	1422 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	155 W
Rds On (Max) @ Id, Vgs	74 mOhm
Supplier Device Package	TO-247-4
Technology	SiCFET (Cascode SiCJFET)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	6 V

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max) [Max]	Power Dissipation (Max)
Qorvo UJ4C075044K3S	37.8 nC	SiCFET (Cascode SiCJFET)	20 V	12 V 12 V	N-Channel	6 V	56 mOhm	TO-247-3	TO-247-3	-55 °C	175 ░C	1400 pF	750 V	37.4 A	Through Hole	203 W
Qorvo UJ4C075018K4S	37.8 nC	SiCFET (Cascode SiCJFET)	20 V		N-Channel	6 V	23 mOhm	TO-247-4	TO-247-4	-55 °C	175 ░C	1422 pF	750 V		Through Hole		385 W
Qorvo UJ4C075060K4S	37.8 nC	SiCFET (Cascode SiCJFET)	20 V		N-Channel	6 V	74 mOhm	TO-247-4	TO-247-4	-55 °C	175 ░C	1422 pF	750 V	28 A	Through Hole		155 W
Qorvo UJ4C075018K3S	37.8 nC	SiCFET (Cascode SiCJFET)	20 V		N-Channel	6 V	23 mOhm	TO-247-3	TO-247-3	-55 °C	175 ░C	1422 pF	750 V		Through Hole		385 W

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General part information

N-Channel 750 V 28A (Tc) 155W (Tc) Through Hole TO-247-4

Technical documentation and resources

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