ISZ0901NLSATMA1

Obsolete

Infineon Technologies

25V, N-CH MOSFET, LOGIC LEVEL, P

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Obsolete

Infineon Technologies

25V, N-CH MOSFET, LOGIC LEVEL, P

Technical Specifications

Parameters and characteristics for this part

Specification	ISZ0901NLSATMA1

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.1 nC
Input Capacitance (Ciss) (Max) @ Vds	670 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	26 W
Rds On (Max) @ Id, Vgs [Max]	8.1 mOhm
Supplier Device Package	PG-TDSON-8-25
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies ISZ0901NLSATMA1	20 V	N-Channel	2 V	4.5 V 10 V	PG-TDSON-8-25	MOSFET (Metal Oxide)	670 pF	25 V	8-PowerTDFN	Surface Mount	8.1 mOhm	26 W	-55 °C	150 °C	9.1 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 40A (Tc) 26W (Tc) Surface Mount PG-TDSON-8-25

Technical documentation and resources