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BD159G

BD159G

Obsolete
ON Semiconductor

TRANS GP BJT NPN 350V 0.5A 20000MW 3-PIN(3+TAB) TO-225 BOX

Find alt
BD159G

BD159G

Obsolete
ON Semiconductor

TRANS GP BJT NPN 350V 0.5A 20000MW 3-PIN(3+TAB) TO-225 BOX

Find alt

Description

General part information

BD159G

This device is designed for power output stages for television, radio, phonograph and other consumer product applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationBD159G
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)100 µA
DC Current Gain (hFE) (Min)30
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-225AA, TO-126-3
Package NameTO-126
Power - Max20 W
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)350 V

Pricing

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CAD

3D models and CAD resources for this part