IRFB4229PBF
ActivePOWER MOSFET, HEXFET®, N CHANNEL, 250 V, 46 A, 0.038 OHM, TO-220AB, THROUGH HOLE
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IRFB4229PBF
ActivePOWER MOSFET, HEXFET®, N CHANNEL, 250 V, 46 A, 0.038 OHM, TO-220AB, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRFB4229PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 46 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 110 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4560 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 330 W |
| Rds On (Max) @ Id, Vgs [Max] | 46 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRFB4229 Series
The IRFB4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.