2SB1201T-E
ActiveON Semiconductor
TRANS PNP 50V 2A TP
2SB1201T-E
ActiveON Semiconductor
TRANS PNP 50V 2A TP
Description
General part information
2SB1201T-E
Bipolar (BJT) Transistor PNP 50 V 2 A 150MHz 800 mW Through Hole TP
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SB1201T-E |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 200 |
| Frequency - Transition | 150 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Package Name | TP |
| Power - Max | 800 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) | 700 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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Documents
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