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CY10E422-7DC

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Infineon Technologies

IC SRAM 1KBIT PARALLEL 24SBDIP

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CY10E422-7DC

Active
Infineon Technologies

IC SRAM 1KBIT PARALLEL 24SBDIP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationCY10E422-7DC
Access Time7 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization256 x 4
Memory Size128 B
Memory TypeVolatile
Mounting TypeThrough Hole
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case10.16 mm
Package / Case24-CDIP
Package / Case10.16 mm
Supplier Device Package24-SBDIP
TechnologySRAM - Asynchronous
Voltage - Supply [Max]5.46 V
Voltage - Supply [Min]4.94 V
Write Cycle Time - Word, Page7 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 35$ 8.60

Description

General part information

CY10E422 Series

SRAM - Asynchronous Memory IC 1Kbit Parallel 7 ns 24-SBDIP

Documents

Technical documentation and resources

No documents available