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TSM300NB06LDCR

TSM300NB06LDCR

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Taiwan Semiconductor Corporation

60V, 24A, DUAL, N-CHANNEL LOW VOLTAGE MOSFETS

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TSM300NB06LDCR

TSM300NB06LDCR

Active
Taiwan Semiconductor Corporation

60V, 24A, DUAL, N-CHANNEL LOW VOLTAGE MOSFETS

Find alt

Description

General part information

TSM300NB06LDCR

60V, 24A, DUAL, N-CHANNEL LOW VOLTAGE MOSFETS

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM300NB06LDCR
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Ta)5 A
Current - Continuous Drain (Id) (Tc)24 A
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate
Gate Charge (Max)17 nC
Input Capacitance (Ciss) (Max)966 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length5 mm
Package Name8-PDFNU
Package Width6 mm
Power - Max (Ta)2 W
Power - Max (Tc)40 W
Rds On (Max)30 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)2.5 V

Pricing

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CAD

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