RSU002P03T106
NRNDRohm Semiconductor
TRANSISTOR: P-MOSFET; UNIPOLAR; -30V; -200MA; IDM: -0.4A; 200MW
RSU002P03T106
NRNDRohm Semiconductor
TRANSISTOR: P-MOSFET; UNIPOLAR; -30V; -200MA; IDM: -0.4A; 200MW
Description
General part information
RSU002P03T106
ROHM recommendsRU1E002SPas standard spec."· 4V-drive type· Pch Small-signal MOSFET· Small Surface Mount Package· Pb Free/RoHS Compliant
Technical Specifications
Parameters and characteristics for this part
| Specification | RSU002P03T106 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 250 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) | 30 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-70, SOT-323 |
| Package Name | UMT3 |
| Power Dissipation (Max) | 200 mW |
| Rds On (Max) | 1.4 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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