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PCFFS2065AF

PCFFS2065AF

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ON Semiconductor

DIODE SIL CARBIDE 650V 20A DIE

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PCFFS2065AF

PCFFS2065AF

Active
ON Semiconductor

DIODE SIL CARBIDE 650V 20A DIE

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Description

General part information

PCFFS2065AF

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew

Technical Specifications

Parameters and characteristics for this part

SpecificationPCFFS2065AF
Current - Average Rectified (Io)20 A
Current - Reverse Leakage200 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Package / CaseDie
Package NameDie
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.75 V

Pricing

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CAD

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Documents

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