VP0550N3-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -500V, 125 OHM
Deep-Dive with AI
Search across all available documentation for this part.
VP0550N3-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -500V, 125 OHM
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | VP0550N3-G | VP0550 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 54 mA | 54 mA |
| Drain to Source Voltage (Vdss) | 500 V | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V | 5 V |
| FET Type | P-Channel | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 70 pF | 70 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | 1 W | 1 W |
| Rds On (Max) @ Id, Vgs [Max] | 125 Ohm | 125 Ohm |
| Supplier Device Package | TO-92-3 | TO-92-3 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 2.20 | |
| 25 | $ 1.84 | |||
| 100 | $ 1.67 | |||
| Microchip Direct | BAG | 1 | $ 2.20 | |
| 25 | $ 1.84 | |||
| 100 | $ 1.67 | |||
| 1000 | $ 1.38 | |||
| 5000 | $ 1.28 | |||
| 10000 | $ 1.19 | |||
VP0550 Series
MOSFET, P-Channel Enhancement-Mode, -500V, 125 Ohm
| Part | Rds On (Max) @ Id, Vgs [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Vgs (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Package / Case | Power Dissipation (Max) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology VP0550N3-G-P013 | 125 Ohm | P-Channel | 70 pF | 4.5 V | 500 V | 20 V | MOSFET (Metal Oxide) | 10 V | 5 V | TO-92-3 | TO-226-3, TO-92-3 | 1 W | Through Hole | -55 °C | 150 °C | 54 mA |
Microchip Technology VP0550N3-G-P013 | ||||||||||||||||
Microchip Technology VP0550N3-G | ||||||||||||||||
Microchip Technology VP0550N3-G | 125 Ohm | P-Channel | 70 pF | 4.5 V | 500 V | 20 V | MOSFET (Metal Oxide) | 10 V | 5 V | TO-92-3 | TO-226-3, TO-92-3 | 1 W | Through Hole | -55 °C | 150 °C | 54 mA |
Description
General part information
VP0550 Series
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.