NVMFS6H864NT1G
ActiveON Semiconductor
POWER MOSFET 80 V, 23A, 32 MΩ, SINGLE N-CHANNEL, SO8-FL
NVMFS6H864NT1G
ActiveON Semiconductor
POWER MOSFET 80 V, 23A, 32 MΩ, SINGLE N-CHANNEL, SO8-FL
Description
General part information
NVMFS6H864NT1G
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMFS6H864NT1G |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 6.7 A |
| Current - Continuous Drain (Id) (Tc) | 21 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 6.9 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 370 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 5 Leads |
| Package Length | 5 mm |
| Package Name | 8-PowerTDFN, 8-SOFL, 5-DFN |
| Package Width | 6 mm |
| Power Dissipation (Max) | 3.5 W, 33 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 32 mOhm, 32 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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