DMP1011LFVQ-13
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
DMP1011LFVQ-13
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMP1011LFVQ-13
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is qualified to AEC-Q101, supported by a PPAP.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP1011LFVQ-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 13 A |
| Current - Continuous Drain (Id) (Tc) | 19 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 9.5 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 913 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | PowerDI3333-8 (SWP) Type UX |
| Power Dissipation (Max) | 1.05 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 11.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -6 V |
| Vgs(th) (Max) | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources