IRF9333TRPBF

Obsolete

Infineon Technologies

30V 9.2A 19.4MΩ@10V,9.2A 2.5W 1 PIECE P-CHANNEL SOIC-8 MOSFETS ROHS

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Obsolete

Infineon Technologies

30V 9.2A 19.4MΩ@10V,9.2A 2.5W 1 PIECE P-CHANNEL SOIC-8 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9333TRPBF

Current - Continuous Drain (Id) @ 25°C	9.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	19.4 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
Infineon Technologies IRF9333TRPBF	38 nC	Surface Mount	2.4 V	P-Channel	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	20 V	19.4 mOhm	1110 pF	9.2 A	8-SO	4.5 V 10 V	30 V	-55 °C	150 °C	2.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 9.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources