1N5402BULK
ActiveEIC Semiconductor
DIODE GEN PURP 200V 3A DO201AD
1N5402BULK
ActiveEIC Semiconductor
DIODE GEN PURP 200V 3A DO201AD
Description
General part information
1N5402BULK
Diode 200 V 3A Through Hole DO-201AD
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5402BULK |
|---|---|
| Capacitance | 28 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | DO-201AD, Axial |
| Package Name | DO-201AD |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) | 950 mV, 950 mV |
Pricing
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CAD
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Documents
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